公开(公告)号：US12154881B2

公开(公告)日：2024-11-26

申请号：US18185702

申请日：2023-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunrae Cho ,  Jinyeol Yang ,  Jungmin Ko ,  Seungduk Baek

IPC: H01L23/00 ,  H01L25/065

Abstract: An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

公开(公告)号：US20230223374A1

公开(公告)日：2023-07-13

申请号：US18185702

申请日：2023-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunrae CHO ,  Jinyeol Yang ,  Jungmin Ko ,  Seungduk Baek

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/20 ,  H01L25/0655 ,  H01L24/05 ,  H01L24/29 ,  H01L24/13 ,  H01L2224/29009 ,  H01L2224/13083 ,  H01L2224/0557 ,  H01L2224/29008 ,  H01L2924/14 ,  H01L2224/0401

Abstract: An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

公开(公告)号：US11640951B2

公开(公告)日：2023-05-02

申请号：US16846616

申请日：2020-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunrae Cho ,  Jinyeol Yang ,  Jungmin Ko ,  Seungduk Baek

IPC: H01L23/00 ,  H01L25/065

Abstract: An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.