公开(公告)号：US20240006190A1

公开(公告)日：2024-01-04

申请号：US18117864

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jin-Hong PARK ,  Hogeun AHN ,  BoReum LEE ,  Sunguk JANG ,  Jiwan KOO ,  Seunghwan SEO

IPC: H01L21/467 ,  H01L29/66 ,  H01L21/441

CPC classification number: H01L21/467 ,  H01L29/66969 ,  H01L21/441

Abstract: A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.

公开(公告)号：US20230317811A1

公开(公告)日：2023-10-05

申请号：US17989435

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhong PARK ,  Jiwan KOO ,  Sahwan HONG ,  Juncheol KANG ,  Seunghwan SEO ,  Hogeun AHN ,  Jaewoong CHOI ,  Bongjin KUH

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/76 ,  H01L21/02 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L29/24 ,  H01L29/7606 ,  H01L21/02568 ,  H01L29/401 ,  H01L29/66969

Abstract: A semiconductor device includes a channel on a substrate, the channel including a two-dimensional (2D) material, a gate insulating layer on a portion of the channel, a gate electrode on the gate insulating layer, first and second contact patterns on respective portions of the channel, the first and second contact patterns including a carbide of a transition metal, and first and second source/drain electrodes on the first and second contact patterns, respectively, and the first and second source/drain electrodes including a metal.