公开(公告)号：US20180166334A1

公开(公告)日：2018-06-14

申请号：US15668029

申请日：2017-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rak Hwan KIM ,  Byung Hee KIM ,  Sang Bom KANG ,  Jong Jin LEE ,  Eun Ji JUNG

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/485

CPC classification number: H01L21/76846 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/5329 ,  H01L23/53295

Abstract: A semiconductor device includes a lower layer, an upper layer on the lower layer, a contact between the lower layer and the upper layer, the contact electrically connects the lower layer and the upper layer, a capping pattern wrapping around the contact and covering an upper surface of the contact, a barrier layer wrapping around the capping pattern and covering a lower surface of the capping pattern and a lower surface of the contact, and an interlayer insulating layer between the lower layer and the upper layer, the interlayer insulating layer wrapping around the barrier layer and exposing an upper surface of the capping pattern, wherein the capping pattern includes a material having an etching selectivity with respect to an oxide.

公开(公告)号：US20230197604A1

公开(公告)日：2023-06-22

申请号：US17845209

申请日：2022-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： John Soo KIM ,  Min Wook CHUNG ,  Kyoung Suk KIM ,  Soo Kyung KIM ,  Won Suk LEE ,  Jong Jin LEE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76846 ,  H01L21/76877

Abstract: A semiconductor device is provided. The semiconductor device includes: a first interlayer insulating film defining a lower wiring trench; a lower wiring structure including a first lower barrier film which extends along sidewalls of the lower wiring trench, and a lower filling film which is on the first lower barrier film; a second interlayer insulating film on the first interlayer insulating film, the second interlayer insulating film defining an upper wiring trench which exposes at least part of the lower wiring structure; and an upper wiring structure provided in the upper wiring trench and connected to the lower wiring structure. An upper surface of the first lower barrier film is closer to a bottom surface of the lower wiring trench than each of an upper surface of the first interlayer insulating film and an upper surface the lower filling film. The upper surface of the first lower barrier film is concave.

公开(公告)号：US20150222158A1

公开(公告)日：2015-08-06

申请号：US14686230

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Jin LEE ,  Woon yong LEE ,  Myong Gui CHOI

IPC: H02K9/02 ,  H02K1/32 ,  D06F37/20

CPC classification number: H02K9/02 ,  D06F37/206 ,  H02K1/32 ,  H02K3/522 ,  H02K9/04 ,  H02K21/22

Abstract: A washing machine includes a tub; a drum arranged in the tub; and a motor mounted on the rear wall, the motor including a stator and a rotor. The stator includes a stator core, a first insulator and a second insulator. The rotor includes a rotor frame including a bottom, air inlets formed at the bottom, and a side wall extended from the bottom. The first insulator is disposed between the stator core and the bottom of the rotor frame, the first insulator including at least one heat dissipation hole. The second insulator is disposed between the stator core and the rear wall of the tub, the second insulator including at least one guide member to position the second insulator on the rear wall of the tub. The guide member is exposed through the dissipation hole when the stator is coupled to the rear wall of the tub.

Abstract translation: 洗衣机包括浴缸; 一个安排在浴缸中的鼓; 以及安装在所述后壁上的电动机，所述电动机包括定子和转子。 定子包括定子芯，第一绝缘体和第二绝缘体。 转子包括转子框架，其包括底部，形成在底部的空气入口和从底部延伸的侧壁。 第一绝缘体设置在定子铁心和转子架的底部之间，第一绝缘体包括至少一个散热孔。 第二绝缘体设置在定子芯和桶的后壁之间，第二绝缘体包括至少一个引导构件，以将第二绝缘体定位在桶的后壁上。 当定子联接到桶的后壁时，引导构件通过散热孔暴露。