公开(公告)号：US20240153792A1

公开(公告)日：2024-05-09

申请号：US18387713

申请日：2023-11-07

Applicant: SEMES CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jung KIM ,  Jin Ah HAN ,  Hee Hwan KIM ,  Yong Hoon HONG ,  Kyoung Suk KIM ,  Jong Hyeok PARK ,  Jin Hyung PARK ,  Dae Hyuk CHUNG ,  Ji Hoon CHA

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/30604

Abstract: An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution. The apparatus includes a substrate rotating device configured to rotate a seated substrate in a spinning manner, a chemical solution supply device configured to supply a chemical solution to the substrate, a chemical solution discharge line configured to discharge the chemical solution having undergone a process to an outside, a chemical solution circulation line configured to circulate the chemical solution having undergone the process to the chemical solution supply device, and a discharged chemical solution selection device configured to discharge a chemical solution containing a first amount of process by-products to the outside through the chemical solution discharge line and to circulate a chemical solution containing a second amount of process by-products through the chemical solution circulation line, wherein the first amount of process by-products is larger than the second amount of process by-products.

公开(公告)号：US20230197604A1

公开(公告)日：2023-06-22

申请号：US17845209

申请日：2022-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： John Soo KIM ,  Min Wook CHUNG ,  Kyoung Suk KIM ,  Soo Kyung KIM ,  Won Suk LEE ,  Jong Jin LEE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76846 ,  H01L21/76877

Abstract: A semiconductor device is provided. The semiconductor device includes: a first interlayer insulating film defining a lower wiring trench; a lower wiring structure including a first lower barrier film which extends along sidewalls of the lower wiring trench, and a lower filling film which is on the first lower barrier film; a second interlayer insulating film on the first interlayer insulating film, the second interlayer insulating film defining an upper wiring trench which exposes at least part of the lower wiring structure; and an upper wiring structure provided in the upper wiring trench and connected to the lower wiring structure. An upper surface of the first lower barrier film is closer to a bottom surface of the lower wiring trench than each of an upper surface of the first interlayer insulating film and an upper surface the lower filling film. The upper surface of the first lower barrier film is concave.