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公开(公告)号:US20190198323A1
公开(公告)日:2019-06-27
申请号:US16027692
申请日:2018-07-05
发明人: Jung Han Lee , Byoung-gi Kim , Jong Pil Kim , Kihwan Lee
IPC分类号: H01L21/225 , H01L21/02 , H01L21/8238 , H01L21/762 , H01L23/532
摘要: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.
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公开(公告)号:US11107686B2
公开(公告)日:2021-08-31
申请号:US16720878
申请日:2019-12-19
发明人: Jung Han Lee , Byoung-gi Kim , Jong Pil Kim , Kihwan Lee
IPC分类号: H01L21/225 , H01L21/02 , H01L21/8238 , H01L23/532 , H01L21/762
摘要: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.
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公开(公告)号:US20220406939A1
公开(公告)日:2022-12-22
申请号:US17667753
申请日:2022-02-09
发明人: Jong Pil Kim , Wook Hyun Kwon
IPC分类号: H01L29/78 , H01L29/417
摘要: The present disclosure provides a semiconductor device with improved element performance and reliability. The semiconductor device includes a lower insulating layer, a fin-shaped insulating layer that is on the lower insulating layer and extends in a first direction, a field insulating layer that is on the lower insulating layer and extends in the first direction, a plurality of gate structures that are on the fin-shaped insulating layer and include a gate electrode intersecting the fin-shaped insulating layer, a source/drain region that is on the fin-shaped insulating layer and is between the gate structures, and an active pattern that is on the fin-shaped insulating layer and penetrates the gate electrode and is electrically connected to the source/drain region, where the gate electrode extends in a second direction intersecting the first direction.
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公开(公告)号:US10553434B2
公开(公告)日:2020-02-04
申请号:US16027692
申请日:2018-07-05
发明人: Jung Han Lee , Byoung-gi Kim , Jong Pil Kim , Kihwan Lee
IPC分类号: H01L21/225 , H01L21/02 , H01L21/8238 , H01L23/532 , H01L21/762
摘要: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.
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公开(公告)号:US09414801B2
公开(公告)日:2016-08-16
申请号:US14193791
申请日:2014-02-28
发明人: Jong Pil Kim , So Dam Baek
IPC分类号: A61B6/06 , G21K1/04 , H01J35/02 , G01B7/32 , G06G7/04 , H01L23/64 , A61B6/04 , A61B5/00 , A61B6/00 , A61B5/103 , A61B5/107 , B25J9/16 , A61B5/053 , G01B7/00
CPC分类号: A61B6/544 , A61B5/053 , A61B5/0531 , A61B5/103 , A61B5/107 , A61B5/6887 , A61B5/708 , A61B6/0414 , A61B6/06 , A61B6/4035 , A61B6/469 , A61B6/502 , A61B6/5252 , A61B6/542 , A61B6/545 , B25J9/1694 , G01B7/003 , G01B7/32 , G06G7/04 , G21K1/046 , H01J35/025 , H01L23/642 , H01L23/647 , H01L2924/0002 , H01L2924/00
摘要: Disclosed herein are an X-ray imaging apparatus and a control method therefor in which a region of a compressed breast is measured by a touch sensor and a collimator is controlled such that an X-ray emission region corresponds to the measured region of a compressed breast, whereby workflow for performing X-ray imaging may be reduced and subject pain due to breast compression may be alleviated. The X-ray imaging apparatus includes an X-ray source to generate X-rays and irradiate an object with the generated X-rays, a collimator to adjust an emission region of the X-rays generated from the X-ray source, an X-ray detector to detect X-rays having passed through the object to acquire X-ray data, a touch sensor disposed above the X-ray detector, a compression paddle to compress the object placed on the touch sensor, and a collimator control unit to calculate location and size of the compressed object based on an output value of the touch sensor and control the collimator based on calculation results.
摘要翻译: 本文公开了一种X射线成像设备及其控制方法,其中通过触摸传感器测量压缩乳房的区域,并且对准直仪进行控制,使得X射线发射区域对应于压缩乳房的测量区域 从而可以减少用于执行X射线成像的工作流程,并且可以减轻由于乳房压缩引起的受试者疼痛。 X射线成像装置包括:X射线源,用于产生X射线并用生成的X射线照射物体;准直器,用于调整从X射线源产生的X射线的发射区域; X 射线检测器,用于检测已经穿过物体的X射线以获取X射线数据,设置在X射线检测器上方的触摸传感器,压缩板,以压缩放置在触摸传感器上的物体;准直器控制单元, 基于触摸传感器的输出值计算压缩对象的位置和大小,并根据计算结果控制准直仪。
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