THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS

    公开(公告)号:US20210242369A1

    公开(公告)日:2021-08-05

    申请号:US17022496

    申请日:2020-09-16

    Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

    SEMICONDUCTOR LIGHT EMITTING DEVICES

    公开(公告)号:US20210408327A1

    公开(公告)日:2021-12-30

    申请号:US17352708

    申请日:2021-06-21

    Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

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