公开(公告)号：US20210408327A1

公开(公告)日：2021-12-30

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo TAK ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Youngjin CHOI ,  Yongseok CHOI ,  Jonghoon HA

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

公开(公告)号：US20190074513A1

公开(公告)日：2019-03-07

申请号：US16119170

申请日：2018-08-31

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Dongjin HAM ,  Jayhyok SONG ,  Andrei KAPYLOU ,  Jinhwan PARK ,  Youhwan SON ,  San MOON ,  Sungjin AHN ,  Donghee YEON ,  Jinsu HA ,  Kwangjin PARK ,  Byungjin CHOI

IPC: H01M4/525 ,  H01M10/0525 ,  H01M4/36 ,  H01M4/505

Abstract: A cathode active material includes a secondary particle including an aggregate of a plurality of primary particles, wherein the secondary particle includes a nickel-containing lithium transition metal oxide having a layered crystal structure, wherein the plurality of primary particles includes a first primary particle having a size greater than about 400 nanometers, a second primary particle having a size less than about 150 nanometers, and a third primary particle having a size of about 150 nanometers to about 400 nanometers, wherein the third primary particle has a area of greater than or equal to about 80% of a total area of the plurality of primary particles, and wherein the secondary particle has a porosity of less than or equal to about 10% of a total area of the cathode active material.

公开(公告)号：US20230307615A1

公开(公告)日：2023-09-28

申请号：US18314492

申请日：2023-05-09

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： San MOON ,  Jayhyok SONG ,  Sungjin AHN ,  Donghee YEON ,  Dongjin HAM ,  Jinhwan PARK

IPC: H01M4/36 ,  H01M4/04 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/38 ,  H01M4/525 ,  H01M4/62 ,  H01M10/0525

CPC classification number: H01M4/366 ,  H01M4/0471 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/382 ,  H01M4/525 ,  H01M4/62 ,  H01M10/0525

Abstract: A composite cathode active material includes: a secondary including a core including a plurality of primary particles; and a shell on the core, wherein the plurality of primary particles include a nickel-containing lithium transition metal oxide doped with a first metal, and wherein at least one grain boundary between the plurality of primary particles includes a first composition including the first metal.

公开(公告)号：US20210242369A1

公开(公告)日：2021-08-05

申请号：US17022496

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin CHOI ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Yongseok CHOI ,  Youngjo TAK ,  Jonghoon HA

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L27/15

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.