公开(公告)号：US20170148877A1

公开(公告)日：2017-05-25

申请号：US15423406

申请日：2017-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongki JUNG ,  Myungil KANG ,  Yoonhae KIM ,  Kwanheum LEE

IPC: H01L29/08 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.

公开(公告)号：US20200279919A1

公开(公告)日：2020-09-03

申请号：US16875314

申请日：2020-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongki JUNG ,  Myungil KANG ,  Yoonhae KIM ,  Kwanheum LEE

IPC: H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.

公开(公告)号：US20180151671A1

公开(公告)日：2018-05-31

申请号：US15880969

申请日：2018-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongki JUNG ,  Myungil KANG ,  Yoonhae KIM ,  Kwanheum LEE

IPC: H01L29/08 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.

公开(公告)号：US20240204050A1

公开(公告)日：2024-06-20

申请号：US18588586

申请日：2024-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongki JUNG ,  Myungil KANG ,  Yoonhae KIM ,  Kwanheum LEE

IPC: H01L29/08 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.

公开(公告)号：US20220246724A1

公开(公告)日：2022-08-04

申请号：US17725617

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongki Jung ,  Myungil KANG ,  Yoonhae KIM ,  Kwanheum LEE

IPC: H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.

公开(公告)号：US20190148503A1

公开(公告)日：2019-05-16

申请号：US16243564

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok CHOI ,  Hwichan JUN ,  Yoonhae KIM ,  Chulsung KIM ,  Heungsik PARK ,  Doo-Young LEE

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.