Abstract:
A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
Abstract:
There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.