公开(公告)号：US20140008608A1

公开(公告)日：2014-01-09

申请号：US13828346

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Sung-Won HWANG ,  Geun-Woo KO ,  Cheol-Soo SONE ,  Sung-Hyun SIM ,  Jin-Sub LEE

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/145 ,  H01L33/305 ,  H01L33/32 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。

公开(公告)号：US20140191264A1

公开(公告)日：2014-07-10

申请号：US14034391

申请日：2013-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Kyung-Wook HWANG ,  Deok-Kyu KIM ,  Cheol-Soo SONE

IPC: H01L33/58

CPC classification number: H01L33/02

Abstract: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.

Abstract translation: 提供了一种半导体发光器件，包括具有第一折射率的衬底，形成在衬底上的具有不同于第一折射率的第二折射率的氮化物半导体层，形成在氮化物上的发光结构 半导体层并且包括第一导电半导体层，有源层和第二导电半导体层，以及光学提取膜，其设置在所述衬底和所述氮化物半导体层之间并且具有所述第一折射率和所述第二折射率之间的折射率 。