SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20140191264A1

    公开(公告)日:2014-07-10

    申请号:US14034391

    申请日:2013-09-23

    CPC classification number: H01L33/02

    Abstract: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.

    Abstract translation: 提供了一种半导体发光器件,包括具有第一折射率的衬底,形成在衬底上的具有不同于第一折射率的第二折射率的氮化物半导体层,形成在氮化物上的发光结构 半导体层并且包括第一导电半导体层,有源层和第二导电半导体层,以及光学提取膜,其设置在所述衬底和所述氮化物半导体层之间并且具有所述第一折射率和所述第二折射率之间的折射率 。

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