公开(公告)号：US20150115281A1

公开(公告)日：2015-04-30

申请号：US14594039

申请日：2015-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US20150125983A1

公开(公告)日：2015-05-07

申请号：US14594020

申请日：2015-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/62 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US20140008608A1

公开(公告)日：2014-01-09

申请号：US13828346

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Sung-Won HWANG ,  Geun-Woo KO ,  Cheol-Soo SONE ,  Sung-Hyun SIM ,  Jin-Sub LEE

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/145 ,  H01L33/305 ,  H01L33/32 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。

公开(公告)号：US20140374772A1

公开(公告)日：2014-12-25

申请号：US14483036

申请日：2014-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。

公开(公告)号：US20140191264A1

公开(公告)日：2014-07-10

申请号：US14034391

申请日：2013-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Kyung-Wook HWANG ,  Deok-Kyu KIM ,  Cheol-Soo SONE

IPC: H01L33/58

CPC classification number: H01L33/02

Abstract: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.

Abstract translation: 提供了一种半导体发光器件，包括具有第一折射率的衬底，形成在衬底上的具有不同于第一折射率的第二折射率的氮化物半导体层，形成在氮化物上的发光结构 半导体层并且包括第一导电半导体层，有源层和第二导电半导体层，以及光学提取膜，其设置在所述衬底和所述氮化物半导体层之间并且具有所述第一折射率和所述第二折射率之间的折射率 。