公开(公告)号：US20150221825A1

公开(公告)日：2015-08-06

申请号：US14521423

申请日：2014-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geun-Woo KO ,  Nam Goo CHA ,  Hyun Seong KUM

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/54 ,  H01L33/46 ,  H01L33/62 ,  H01L33/58

CPC classification number: H01L33/24 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/16245

Abstract: A semiconductor light emitting device includes a substrate, a first conductivity-type semiconductor base layer disposed on the substrate, a plurality of light emitting nanostructures, a transparent electrode layer, and a first electrode. The plurality of light emitting nanostructures are disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer and include a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer, respectively. The transparent electrode layer is disposed on the second conductivity-type semiconductor layer and between the plurality of light emitting nanostructures. The first electrode is electrically connected to the second conductivity-type semiconductor layer by penetrating the substrate.

Abstract translation: 半导体发光器件包括衬底，设置在衬底上的第一导电型半导体基底层，多个发光纳米结构，透明电极层和第一电极。 多个发光纳米结构被设置为在第一导电型半导体基底层上彼此间隔开，并且分别包括第一导电型半导体芯，有源层和第二导电型半导体层。 透明电极层设置在第二导电型半导体层上，并且在多个发光纳米结构之间。 第一电极通过穿透基板与第二导电型半导体层电连接。

公开(公告)号：US20140008608A1

公开(公告)日：2014-01-09

申请号：US13828346

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Sung-Won HWANG ,  Geun-Woo KO ,  Cheol-Soo SONE ,  Sung-Hyun SIM ,  Jin-Sub LEE

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/145 ,  H01L33/305 ,  H01L33/32 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。