公开(公告)号：US20140008608A1

公开(公告)日：2014-01-09

申请号：US13828346

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Sung-Won HWANG ,  Geun-Woo KO ,  Cheol-Soo SONE ,  Sung-Hyun SIM ,  Jin-Sub LEE

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/145 ,  H01L33/305 ,  H01L33/32 ,  H01L33/40

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract translation: 半导体发光器件包括接触层。 接触层具有逐渐变化的Al元素的组成比。 由半导体发光器件的接触层中的Al元素形成的区域可以提高从有源层发射的光的光提取效率，并且有助于形成反射电极。