公开(公告)号：US20240003007A1

公开(公告)日：2024-01-04

申请号：US18138192

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： PYUNG MOON ,  KIHYUN KIM ,  HYOUNGSUB KIM ,  HOIJOON KIM ,  GEUNYOUNG YEOM ,  KONGSOO LEE ,  HEESOO LEE

IPC: C23C16/455 ,  H01J37/32 ,  H01L29/16 ,  H01L29/51

CPC classification number: C23C16/45536 ,  H01L29/517 ,  H01L29/1606 ,  H01J37/32357

Abstract: A method of manufacturing an integrated circuit device includes alternately stacking sacrificial semiconductor layers and channel layers on a substrate to form a stack structure, forming source regions and drain regions on both sides of the stack structure, forming a gate space between the channel layers by removing the sacrificial semiconductor layers, forming the channel layers to be spaced apart from each other in a perpendicular direction to the substrate, performing a plasma treatment of boron trichloride (BCL3) on the channel layers, forming gate dielectric layers on the channel layers on which the plasma treatment of boron trichloride (BCL3) is performed, and forming gate layers covering the gate dielectric layers in the gate space.

公开(公告)号：US20210327804A1

公开(公告)日：2021-10-21

申请号：US17021065

申请日：2020-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KIHYUN KIM ,  YOUNGHO KWON ,  SANGROK LEE

IPC: H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a lower circuit structure including a first lower conductive pattern. A middle wiring structure is disposed on the lower circuit structure and includes a horizontal wiring. A middle circuit structure is disposed on the middle wiring structure and includes a stacked structure of alternating wiring layers and insulation layers. A channel structure extends to an inner portion of the stacked structure and contacts the horizontal wiring. A contact plug contacting the first lower conductive pattern and the horizontal wiring is disposed in the middle wiring structure. A lowermost end of the channel structure is relatively farther away from a top surface of the substrate than a bottom surface of the horizontal wiring. An uppermost end of the contact plug is relatively farther away from the top surface of the substrate than the bottom surface of the horizontal wiring, and the uppermost end of the contact plug is disposed relatively closer to the top surface of the substrate than a lowermost end of each of the wiring layers.