公开(公告)号：US10381461B2

公开(公告)日：2019-08-13

申请号：US15649996

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namjin Cho ,  Yeontae Kim ,  Keesoo Park ,  Eunsok Choi ,  Kyuhee Han

IPC: C23C16/455 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.

公开(公告)号：US20170317188A1

公开(公告)日：2017-11-02

申请号：US15649996

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAMJIN CHO ,  Yeontae Kim ,  Keesoo Park ,  Eunsok Choi ,  Kyuhee Han

IPC: H01L29/66 ,  C23C16/455

CPC classification number: H01L29/66742 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45574

Abstract: A thin film forming apparatus includes: an injector, the injector including: a distributor including a first distribution portion connected to a first gas inlet, and a second distribution portion connected to a second gas inlet; and a guide connected to the distributor, the guide including a first outlet connected to the first distribution portion, and a second outlet connected to the second distribution portion, wherein the second outlet is disposed above the first outlet.