公开(公告)号：US20240215756A1

公开(公告)日：2024-07-04

申请号：US18608155

申请日：2024-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Najeong HAN ,  Sanga Kim ,  Yongjun Kim ,  Namjin Cho ,  Woogyung Cho

IPC: A47J36/32 ,  A23L5/10 ,  H04L12/28

CPC classification number: A47J36/321 ,  A23L5/10 ,  H04L12/2816

Abstract: An electronic apparatus includes: a communication interface configured to perform a communication connection with an external device; a memory storing instructions; and a processor connected to the memory and configured to execute the instructions. The at least one instruction includes instructions to: receive a signal requesting a first cooking operation of a first cooking device for cooking food from a user terminal device while a food cooking image is provided to the user terminal device, in response to receiving the signal requesting the first cooking operation, identify whether a user has the first cooking device based on a list of cooking devices that the user has, and in response to identifying that the user does not have the first cooking device, transmit to the external device a signal for performing a second cooking operation that is capable of replacing the first cooking operation of the first cooking device.

公开(公告)号：US10381461B2

公开(公告)日：2019-08-13

申请号：US15649996

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namjin Cho ,  Yeontae Kim ,  Keesoo Park ,  Eunsok Choi ,  Kyuhee Han

IPC: C23C16/455 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.