CONTAMINANT ANALYSIS APPARATUS AND WATER QUALITY MONITORING SYSTEM

    公开(公告)号:US20220365058A1

    公开(公告)日:2022-11-17

    申请号:US17659695

    申请日:2022-04-19

    Abstract: A real-time wastewater treatment and water quality monitoring system includes a plurality of wastewater treatment facilities configured to purify wastewater generated from semiconductor manufacturing lines, a plurality of contaminant analysis apparatuses configured to obtain and analyze a sample from effluent water discharged through discharge pipes of the wastewater treatment facilities respectively, discharge rate sensors installed in the discharge pipes respectively, and an integrated monitoring apparatus configured to receive measurement result values from the contaminant analysis apparatuses and the discharge rate sensors and monitor in real time concentration of a contaminant in an entirety of the effluent water that is purified and discharged from the wastewater generated in the semiconductor manufacturing lines.

    SUBSTRATE SUPPORTING UNIT, APPARATUS FOR TREATING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20250146133A1

    公开(公告)日:2025-05-08

    申请号:US18672023

    申请日:2024-05-23

    Abstract: A substrate support unit includes a chuck having an upper surface on which to mount a substrate, and including a heater for heating the substrate; a shaft assembly supporting a lower portion of the chuck, and including an electric line connected to the heater; a support assembly having an accommodation space surrounding and accommodating a portion of the shaft assembly, and supporting the shaft assembly; a seal sealing a lower portion of the accommodation space; an inlet communicating with the accommodation space and configured to transfer cooling gas for cooling the electric line into the accommodation space, the inlet being disposed in one of the support assembly and the seal; and an outlet disposed in the support assembly, communicating with the accommodation space, and configured to transfer the cooling gas out of the support assembly.

    APPARATUS FOR PROCESSING SUBSTRATE

    公开(公告)号:US20250140595A1

    公开(公告)日:2025-05-01

    申请号:US18904870

    申请日:2024-10-02

    Abstract: An apparatus for processing a substrate is provided and includes: a chamber including an internal space; a shower head in the internal space of the chamber; a heater below the shower head; lift pins configured to lift the substrate, relative to the heater, while the substrate is on the heater; a rotation shaft connected to the heater; a rotation driving actuator connected to the rotation shaft and configured to rotate the heater by rotating the rotation shaft; a first lifting driving actuator configured to lift the heater; a lifting member configured to lift the lift pins; and a second lifting driving actuator connected to the lifting member and configured to lift the lift pins, relative to the heater, by lifting the lifting member.

    LAYER DEPOSITION APPARATUS AND LAYER DEPOSITION METHOD

    公开(公告)号:US20250137136A1

    公开(公告)日:2025-05-01

    申请号:US18919340

    申请日:2024-10-17

    Abstract: A layer deposition apparatus includes a process chamber configured to provides a space for processing a substrate, the process chamber including an upper chamber and a lower chamber that define an inner space; a substrate support disposed within the process chamber and configured to support the substrate; a lamp heating portion disposed above the upper chamber outside the process chamber and including a plurality of light sources configured to irradiate light onto the substrate through the upper chamber; and an interference thin layer pattern disposed on an upper surface of the upper chamber and configured to reflect at least a portion of light from the plurality of light sources.

    THIN-FILM DEPOSITION APPARATUS
    7.
    发明公开

    公开(公告)号:US20240218561A1

    公开(公告)日:2024-07-04

    申请号:US18515664

    申请日:2023-11-21

    CPC classification number: C30B25/16 C30B25/12

    Abstract: A thin-film deposition apparatus includes: a housing; a chamber located within the housing and providing an internal space; a platform disposed within the chamber and configured to support a substrate; a reflector disposed within the housing and disposed outside the chamber; a light source disposed between opposing walls of the reflector and configured to radiate light onto the substrate; a light receiver disposed within the housing, spaced apart from the light source with a portion of the reflector therebetween, and having a hole through which light emitted from the substrate is introduced; an optical cable connected to the light receiver and extending to the outside of the housing; and a sensor disposed outside the housing, connected to the optical cable, and configured to measure a temperature of the substrate by analyzing light transmitted from the optical cable.

    Method of forming a semiconductor device with an injector having first and second outlets

    公开(公告)号:US10381461B2

    公开(公告)日:2019-08-13

    申请号:US15649996

    申请日:2017-07-14

    Abstract: A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.

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