公开(公告)号：US20220354062A1

公开(公告)日：2022-11-10

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

公开(公告)号：US11700795B2

公开(公告)日：2023-07-18

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32 ,  F21Y115/10

CPC classification number: A01G7/045 ,  F21K9/64 ,  H01L33/06 ,  H01L33/32 ,  H01L33/504 ,  H01L33/507 ,  F21Y2115/10

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.