公开(公告)号：US09805799B2

公开(公告)日：2017-10-31

申请号：US13786501

申请日：2013-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Ho Lee ,  Gwang-Ok Go ,  Kyung-Ho Shin ,  Mi-Hyang Lee

IPC: G06F12/00 ,  G11C16/10 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C11/5621 ,  G11C2207/2236 ,  G11C2211/5641

Abstract: A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.