公开(公告)号：US09805799B2

公开(公告)日：2017-10-31

申请号：US13786501

申请日：2013-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Ho Lee ,  Gwang-Ok Go ,  Kyung-Ho Shin ,  Mi-Hyang Lee

IPC: G06F12/00 ,  G11C16/10 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C11/5621 ,  G11C2207/2236 ,  G11C2211/5641

Abstract: A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.

公开(公告)号：US09582208B2

公开(公告)日：2017-02-28

申请号：US14659278

申请日：2015-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghyun Han ,  Mi-Hyang Lee ,  Jong Youl Lee

IPC: G06F12/02 ,  G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/7201

Abstract: A method of executing a write operation in a nonvolatile memory system includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Abstract translation: 在非易失性存储器系统中执行写入操作的方法包括：接收指示写入操作的写入命令和与写入操作相关联的写入数据，以及响应于写入命令，通过合并操作来确定所选择的合并大小以供使用， 自由块的数量，然后根据自由块的数量从多个FBL中确定所选择的空闲块级别（FBL）。