摘要:
The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.
摘要:
A storage module and method for on-chip copy gather are provided. In one embodiment, a storage module is provided with a memory comprising a plurality of word lines and a plurality of data latches. The memory copies data from a first word line into a first data latch and copies data from a second word line into a second data latch. The memory then copies only some of the data from the first data latch and only some of the data from the second data latch into a third data latch. After that, the memory copies the data from the third data latch to a third word line. In another embodiment, a storage module is provided comprising a memory and an on-chip copy gather module. Other embodiments are provided.
摘要:
A memory circuit capable of being quickly written in data includes a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. Each segment of the plurality of segments includes a plurality of bit line groups, and each bit line group of the plurality of bit line groups corresponds to a pre-charge line. When a predetermined signal is enabled, a potential is written into memory cells of the each segment corresponding to the each bit line group through the pre-charge line and the each bit line group.
摘要:
A memory system processing data according to a received first request may include a main memory and a memory controller. The main memory may comprise a first area and a second area, and may be configured to provide data from the first area to the second area. The memory controller may comprise a scoreboard configured to indicate that a first piece of sub-data of a first set of sub-data of the data has been provided from the first area to the second area. Based on the scoreboard, the memory controller may be configured to perform processing of the first request by using the first piece of sub-data before providing of other pieces of sub-data of the first set of sub-data from the first area to the second area is completed.
摘要:
The present disclosure relates to an apparatus and method capable of carrying out data movement in a memory of a terminal. The apparatus includes a processor configured to transmit a command for data movement and address information for data movement in a memory to the memory, and the memory configured to perform the data movement in units of word line in the memory by using the address information, in response to reception of the command for moving the data.
摘要:
A method of copying a page in a memory device having a plurality of memory blocks and a plurality of sets of bit lines is disclosed, wherein each of the plurality of memory blocks includes a plurality of pages, and each set of bit lines corresponds to a respective memory block, wherein first bit lines of a source memory block that includes a source page are respectively coupled to second bit lines of a target memory block that includes a target page. The method includes disconnecting between the first bit lines of the source memory block including a source page and from the second bit lines of a the target memory block including a target page; transferring data stored in the source page to the first bit lines of the source memory block; transferring the data from the first bit lines of the source memory block to the second bit lines of the target memory block; and writing the data transferred to the second bit lines of the target memory block into the target page.
摘要:
A method and apparatus for inter-row data transfer in memory devices is described. Data transfer from one physical location in a memory device to another is achieved without engaging the external input/output pins on the memory device. In an example method, a memory device is responsive to a row transfer (RT) command which includes a source row identifier and a target row identifier. The memory device activates a source row and storing source row data in a row buffer, latches the target row identifier into the memory device, activates a word line of a target row to prepare for a write operation, and stores the source row data from the row buffer into the target row.
摘要:
A data management method includes assigning data buffered in a first memory device into at least two different groups for transfer to a second memory device. At least one of the different groups has at least two units of the data assigned thereto. The data is transferred from the first memory device to the second memory device in a sequence according to a respective priority associated with each of the different groups and in group-by-group manner such that units of the data assigned to a group having a higher priority are transferred to the second memory device prior to units of the data assigned to a group having a lower priority. Related systems and methods are also discussed.
摘要:
A memory device with a self-copy function includes a memory cell array having first and second banks, and a memory interface. The memory interface reads data from a memory area of the first bank corresponding to a source address contained in previously set self-copy information and writes the read data to a memory area of the second bank corresponding to a destination address contained in the self-copy information via a self-copy data path when a self-copy signal is activated by an external self-copy start request.
摘要:
Various methods and apparatuses permit high speed reads of memory. Portions of data are copied and stored on other word lines. By reading a copy of data that is stored on memory cells accessed by a word line that is already precharged, a latency specification can be met which does not allow time for precharging a second word line.