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公开(公告)号:US20230195333A1
公开(公告)日:2023-06-22
申请号:US17946650
申请日:2022-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Younghyun JI , Jisoo KIM , Kyungwoo NOH , Kyungjin LEE
IPC: G06F3/06
CPC classification number: G06F3/0623 , G06F3/0652 , G06F3/0679
Abstract: A storage device includes a memory device including user memory blocks providing a user data region; and a controller configured to: map logical addresses used in a host to a portion of the user data region, and use a remaining portion of the user data region as an over-provisioning region, wherein the controller is further configured to control the memory device to: erase the user memory blocks based on a sanitize command from the host, provide, to the host, block address information of the user memory blocks based on a block address request from the host, access the user memory blocks based on block state check requests from the host, and provide, to the host, state information indicating whether the user memory blocks are erased according to access results.
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公开(公告)号:US20210051448A1
公开(公告)日:2021-02-18
申请号:US16940579
申请日:2020-07-28
Inventor: Byounghoon JUNG , Kitaek LEE , Sunghyun CHOI , Seungil PARK , Heejin YANG , Kyungjin LEE
Abstract: A communication method and apparatus for communicating with an intelligent base station in a wireless communication system are provided. An operation method of the intelligent base station includes determining whether reconfiguration of an intelligent base station group that supports a terminal is necessary, according to movement information of the terminal, the determination being performed by a first intelligent base station included in the intelligent base station group, when the first intelligent base station determines that reconfiguration of the intelligent base station group is necessary, transmitting a join request to join the intelligent base station group, to a nearby intelligent base station not included in the intelligent base station group, receiving a join approval message in response to the transmitted join request, and reconfiguring the intelligent base station group, based on the received join approval message.
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公开(公告)号:US20230079682A1
公开(公告)日:2023-03-16
申请号:US17751898
申请日:2022-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungchul LEE , Kyungjin LEE
Abstract: A magneto resistive random access memory (MRAM) device including a spin orbit torque structure including a stack of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern; and a magnetic tunnel junction (MTJ) structure on the spin orbit torque structure, the MTJ structure including a stack of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern, wherein the spin orbit torque structure extends in a first direction parallel to an upper surface of the spin orbit torque structure, the ferromagnetic pattern includes a horizontal magnetic material, and the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface of the spin orbit torque structure, the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure.
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公开(公告)号:US20220121240A1
公开(公告)日:2022-04-21
申请号:US17567387
申请日:2022-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngsang JANG , Kukhwan KIM , Kyungjin LEE , Byungchan LEE
IPC: G06F1/16
Abstract: According to certain embodiments, an electronic device comprises: a housing surrounding at least a side surface of the electronic device; a flexible display exposed through a first surface of the electronic device facing a first direction, the exposed area varying based on the movement of the housing; and a flexible material exposed through a second surface of the electronic device facing a second direction opposite to the first direction, the exposed area varying based on the movement of the housing, wherein the width of the flexible material that is exposed through the second surface, expands in a third direction in accordance with the expansion of the width of the flexible display in the third direction, the third direction being substantially perpendicular to the first direction and the second direction.
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