公开(公告)号：US20240237542A1

公开(公告)日：2024-07-11

申请号：US18116835

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer further includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A saturation magnetization of the second layer is between 2-5 times inclusive a saturation magnetization of the first layer.

公开(公告)号：US20210134380A1

公开(公告)日：2021-05-06

申请号：US17001740

申请日：2020-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsun NOH ,  Sungchul LEE ,  Unghwan PI

IPC: G11C19/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

Abstract: A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.

公开(公告)号：US20240237543A1

公开(公告)日：2024-07-11

申请号：US18116839

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side of the reference layer. The non-magnetic spacer includes a first side and a second side in which the first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side in which the first side of the free layer is on the second side of the non-magnetic spacer and in which the free layer further includes an exchange energy Aex having a range of 0.5 to 1.0 μerg/cm2.

公开(公告)号：US20230079682A1

公开(公告)日：2023-03-16

申请号：US17751898

申请日：2022-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungchul LEE ,  Kyungjin LEE

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: A magneto resistive random access memory (MRAM) device including a spin orbit torque structure including a stack of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern; and a magnetic tunnel junction (MTJ) structure on the spin orbit torque structure, the MTJ structure including a stack of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern, wherein the spin orbit torque structure extends in a first direction parallel to an upper surface of the spin orbit torque structure, the ferromagnetic pattern includes a horizontal magnetic material, and the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface of the spin orbit torque structure, the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure.

公开(公告)号：US20240234000A1

公开(公告)日：2024-07-11

申请号：US18116836

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro APALKOV ,  Roman CHEPULSKYY ,  Jaewoo JEONG ,  FNU IKHTIAR ,  Sungchul LEE

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3286 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85

Abstract: A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A ratio of a saturation magnetization of the second layer to a saturation magnetization of the first layer ranges from 0.2-0.8 inclusive.