-
公开(公告)号：US11411052B2
公开(公告)日：2022-08-09
申请号：US17122070
申请日：2020-12-15
发明人： Changhwa Kim , Sejung Park , Junghun Kim , Sangsu Park , Kyungrae Byun , Beom Suk Lee
摘要： An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
-
公开(公告)号：US20210351220A1
公开(公告)日：2021-11-11
申请号：US17134699
申请日：2020-12-28
发明人： Minho Jang , Doowon Kwon , Dongchan Kim , Bokwon Kim , Kyungrae Byun , Jungchak Ahn , Hyunyoung Yeo
IPC分类号： H01L27/146
摘要： An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.
-
公开(公告)号：US20210104577A1
公开(公告)日：2021-04-08
申请号：US17122070
申请日：2020-12-15
发明人： Changhwa Kim , Sejung Park , Junghun Kim , Sangsu Park , Kyungrae Byun , Beom Suk Lee
摘要： An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
-
公开(公告)号：US11776982B2
公开(公告)日：2023-10-03
申请号：US17134699
申请日：2020-12-28
发明人： Minho Jang , Doowon Kwon , Dongchan Kim , Bokwon Kim , Kyungrae Byun , Jungchak Ahn , Hyunyoung Yeo
IPC分类号： H01L27/146 , H01L25/065
CPC分类号： H01L27/14636 , H01L25/0657 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L2225/06541
摘要： An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.
-
5.发明授权公开(公告)号：US10199566B2
公开(公告)日：2019-02-05
申请号：US15220719
申请日：2016-07-27
发明人： Jung-Ik Oh , Jong-Kyu Kim , Jongchul Park , Gwang-Hyun Baek , Kyungrae Byun , Hyun-Woo Yang
摘要： A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.
-
-
-
-
搜索结果
5 条记录 (耗时 0.015 秒)
