公开(公告)号：US20210062339A1

公开(公告)日：2021-03-04

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01L21/285

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

公开(公告)号：US11476151B2

公开(公告)日：2022-10-18

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US11220748B2

公开(公告)日：2022-01-11

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  H01L21/285 ,  C23C16/458 ,  H01L27/11582

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

公开(公告)号：US20210074574A1

公开(公告)日：2021-03-11

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.