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公开(公告)号：US20250069861A1
公开(公告)日：2025-02-27
申请号：US18440554
申请日：2024-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Myeongsoo Shin , Donghyeon Na , Kyung-Sun Kim , Jaebin Kim , Myoung Soo Park , Jong In Park , Seungbo Shim , Jimo Lee , Woongjin Cheon
IPC: H01J37/32
Abstract: A magnetic element assembly includes a magnetic member having a circular ring shape or an arc shape, and at least one focusing member made of a ferromagnetic material, connected to the magnetic member, and configured to adjust distribution of a magnetic force in a peripheral space, where the at least one focusing member includes a connection portion connected to the magnetic member and at least one focusing portion extending downward from the connection portion.
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公开(公告)号：US20240038505A1
公开(公告)日：2024-02-01
申请号：US18295466
申请日：2023-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghyeon Na , Jaebin Kim , Myeongsoo Shin , Dongseok Han , Kyungsun Kim , Namkyun Kim , Jaesung Kim , Seungbo Shim
CPC classification number: H01J37/3266 , H01J37/20 , H01J37/32532
Abstract: A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.
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公开(公告)号：US12020903B2
公开(公告)日：2024-06-25
申请号：US17991024
申请日：2022-11-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yonghee Kim , Byunghun Han , Hyeongmo Kang , Donghyeon Na , Dougyong Sung , Seungbo Shim , Minjae Lee , Myungsun Choi , Minyoung Hur
IPC: H01J37/32 , H01L21/3065 , H01L21/683 , H03H7/38
CPC classification number: H01J37/32183 , H01J37/32091 , H01L21/3065 , H01L21/6833 , H03H7/38 , H01J2237/334
Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.
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公开(公告)号：US11545341B2
公开(公告)日：2023-01-03
申请号：US16891157
申请日：2020-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yonghee Kim , Byunghun Han , Hyeongmo Kang , Donghyeon Na , Dougyong Sung , Seungbo Shim , Minjae Lee , Myungsun Choi , Minyoung Hur
IPC: H01J37/32 , H01L21/683 , H01L21/3065 , H03H7/38
Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.
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公开(公告)号：US20240128054A1
公开(公告)日：2024-04-18
申请号：US18199982
申请日：2023-05-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changho Kim , Donghyeon Na , Yoonbum Nam , Seungbo Shim , Kyungsun Kim , Namkyun Kim
CPC classification number: H01J37/32165 , H01J37/32183 , H01J37/32642 , H01J37/32715 , H01L22/26 , H01J37/32568 , H01J37/32917 , H01J2237/2007 , H01J2237/24564 , H01J2237/334
Abstract: A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.
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Patent Agency Ranking
公开(公告)号：US11367597B2
公开(公告)日：2022-06-21
申请号：US16259185
申请日：2019-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongwoo Lee , Youngjin Noh , Dowon Kim , Donghyeon Na , Seungbo Shim
IPC: H01J37/32 , H01L21/67 , H01L21/683
Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.
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公开(公告)号：US20240420930A1
公开(公告)日：2024-12-19
申请号：US18414681
申请日：2024-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changho Kim , Ho-Jun Lee , Kyung-Sun Kim , Sang-Woo Kim , Donghyeon Na , Seungbo Shim , Sung-Hyeon Jung
IPC: H01J37/32
Abstract: A substrate processing apparatus according to an embodiment includes: a chamber providing a processing space; a support member disposed in the processing space and configured to support a substrate during a process treatment; an antenna providing energy for plasma excitation into the processing space; and an inner electromagnet disposed outside the processing space.
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公开(公告)号：US20230060400A1
公开(公告)日：2023-03-02
申请号：US17747303
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号：US11282679B2
公开(公告)日：2022-03-22
申请号：US16870186
申请日：2020-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghyeon Na , Hyosin Kim , Seungbo Shim , Hadong Jin , Dougyong Sung , Minyoung Hur
Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.
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公开(公告)号：US12222362B2
公开(公告)日：2025-02-11
申请号：US17747303
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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