公开(公告)号：US11948844B2

公开(公告)日：2024-04-02

申请号：US17865040

申请日：2022-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Ho Jeon ,  Hyunwoo Choi ,  Se-Koo Kang ,  Miri Joung

IPC: H01L21/8238 ,  H01L21/033 ,  H01L21/308 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823821 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6681 ,  H01L29/7851

Abstract: Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.