公开(公告)号：US20170060447A1

公开(公告)日：2017-03-02

申请号：US15245164

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGKWON MOON ,  HEEWON LEE ,  SEONGJUN AHN

IPC: G06F3/06

CPC classification number: G11C16/04 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/00

Abstract: Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.

Abstract translation: 实施例包括操作包括闪速存储器的存储设备的方法，包括：计算闪速存储器中所选存储块的重用周期; 基于所选择的存储块的重用周期，确定用于写入数据的所选存储块的一组字线; 并将数据写入一组字线。

公开(公告)号：US20160172046A1

公开(公告)日：2016-06-16

申请号：US14968495

申请日：2015-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGKWON MOON ,  SEONGJUN AHN ,  HEEWON LEE

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/32 ,  G11C16/04

CPC classification number: G11C16/16 ,  G11C7/02 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32

Abstract: A storage device includes a nonvolatile memory having a plurality of memory cells and a memory controller to control the nonvolatile memory. The operating method of the storage device includes reading previously programmed memory cells among the memory cells of the nonvolatile memory and determining a time after erase of the previously programmed memory cells, programming selected memory cells of the nonvolatile memory, and programming meta data including a time after erase of the selected memory cells, based on the determined time after erase of the previously programmed memory cells.

Abstract translation: 存储装置包括具有多个存储单元的非易失性存储器和用于控制非易失性存储器的存储器控​​制器。 存储装置的操作方法包括读取非易失性存储器的存储器单元中的先前编程的存储器单元，并且确定先前编程的存储器单元的擦除之后的时间，编程非易失性存储器的选定的存储单元，以及编程包括时间的元数据 在擦除所选择的存储器单元之后，基于擦除先前编程的存储器单元之后的确定时间。