公开(公告)号：US20230117682A1

公开(公告)日：2023-04-20

申请号：US17806902

申请日：2022-06-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNGHYUN ROH ,  SEUNGWEON HA ,  JAEYOUNG HONG ,  WANGSUN LIM

IPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

摘要： A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.

公开(公告)号：US20180026004A1

公开(公告)日：2018-01-25

申请号：US15616525

申请日：2017-06-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： WON-GIL HAN ,  SANGHO AN ,  YONG JE LEE ,  JAE HEUNG LEE ,  SEUNGWEON HA

IPC分类号： H01L23/00

CPC分类号： H01L24/48 ,  H01L24/04 ,  H01L24/05 ,  H01L24/45 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45164 ,  H01L2224/4555 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48138 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/78301 ,  H01L2224/78621 ,  H01L2224/85045 ,  H01L2224/85055 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85897 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01204 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2224/43848

摘要： A bonding wire includes a wire core including a silver-palladium alloy, and a coating layer disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.