公开(公告)号：US20230288795A1

公开(公告)日：2023-09-14

申请号：US18052026

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hwan BAE ,  Se Jin PARK

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70525

Abstract: A method of fabricating a mask by performing optical proximity correction (OPC) is provided, The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve

公开(公告)号：US20230197803A1

公开(公告)日：2023-06-22

申请号：US17851857

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wook PARK ,  Yun Kyoung SONG ,  Bong Keun KIM ,  Se Jin PARK

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/41775 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775

Abstract: A semiconductor device includes a first active pattern that extends in a first horizontal direction, a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horizontal direction, a third active pattern which extends in the first horizontal direction, and is spaced apart from the second active pattern by a second distance greater than the first distance in the second horizontal direction, a first gate electrode which extends in the second horizontal direction on the first to third active patterns, a second gate electrode which extends in the second horizontal direction on the first and second active patterns, and is spaced apart from the first gate electrode in the first horizontal direction, a first gate contact and a second gate contact which extends in the second horizontal direction on the second gate electrode.