公开(公告)号：US20140106480A1

公开(公告)日：2014-04-17

申请号：US14137619

申请日：2013-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Jun YOO ,  Seong-Jae HONG

IPC: H01L21/66 ,  H01L33/00

CPC classification number: H01L22/20 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/52 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method and apparatus for depositing a phosphor using transfer molding. The method includes: forming a plurality of light-emitting devices on a wafer and rearranging the light-emitting devices on a carrier substrate according to luminance characteristics of the plurality of light-emitting devices by examining the luminance characteristics of the plurality of light-emitting devices; depositing the phosphor on the rearranged light-emitting devices using transfer molding; and separating the light-emitting devices on the carrier substrate.

Abstract translation: 一种使用传递模塑沉积磷光体的方法和装置。 该方法包括：在晶片上形成多个发光器件，并通过检查多个发光器件的亮度特性，根据多个发光器件的亮度特性重新排列载体衬底上的发光器件 设备; 使用传递模塑将磷光体沉积在重排的发光器件上; 并分离载体基板上的发光装置。

公开(公告)号：US20140338593A1

公开(公告)日：2014-11-20

申请号：US14451217

申请日：2014-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Jun YOO ,  Seong-Jae HONG ,  Tsuyoshi TSUTSUI ,  Shin-Kun KIM

IPC: B05C1/02

CPC classification number: B05C1/027 ,  H01L21/6715 ,  H01L21/6838 ,  H01L33/0079 ,  H01L33/50 ,  H01L2933/0041

Abstract: Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.

Abstract translation: 制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。 该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。