公开(公告)号：US20160099387A1

公开(公告)日：2016-04-07

申请号：US14718252

申请日：2015-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tsuyoshi TSUTSUI ,  Jong Cheol KIM ,  Il Woo PARK ,  Jin Hyun LEE

IPC: H01L33/50 ,  H01L33/60

CPC classification number: H01L33/502 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/18 ,  H01L33/24 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a package body having first and second surfaces being opposed to each other, first and second external terminal blocks disposed in opposite end portions of the package body, respectively, and having portions exposed to surfaces of the package body, respectively. A wavelength converting material layer is disposed between the first and second external terminal blocks and has a first surface substantially coplanar with the first surface of the package body, and a second surface opposing the first surface of the wavelength converting material layer. A LED chip is disposed package body on at least a portion of the second surface of the wavelength converting material layer between the first and second external terminal blocks within the package body.

Abstract translation: 一种半导体发光器件包括具有彼此相对的第一和第二表面的封装体，分别设置在封装体的相对端部的第一和第二外部端子块，并且具有分别暴露于封装主体的表面的部分 。 波长转换材料层设置在第一和第二外部端子块之间，并且具有与封装主体的第一表面基本共面的第一表面和与波长转换材料层的第一表面相对的第二表面。 LED芯片在封装主体内的第一和第二外部端子块之间的波长转换材料层的第二表面的至少一部分上设置在封装体上。

公开(公告)号：US20150034994A1

公开(公告)日：2015-02-05

申请号：US14520205

申请日：2014-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tsuyoshi TSUTSUI

IPC: H01L33/50 ,  H01L33/48

CPC classification number: H01L33/507 ,  H01L33/486 ,  H01L33/50 ,  H01L33/501 ,  H01L33/502 ,  H01L33/505 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/8592 ,  H01L2933/0041 ,  H01L2924/00014

Abstract: A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.

Abstract translation: 包括荧光体层的发光器件，使用发光器件的发光器件封装，制造发光器件的方法以及封装发光器件的方法。 发光装置包括：具有顶表面，底表面和侧表面的透光基底; 形成在所述透光性基板的上表面的发光单元; 以及覆盖透光性基板的所有侧面的荧光体层。 根据本发明，可以减少从衬底的侧表面发射的光的色度劣化。

公开(公告)号：US20140338593A1

公开(公告)日：2014-11-20

申请号：US14451217

申请日：2014-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Jun YOO ,  Seong-Jae HONG ,  Tsuyoshi TSUTSUI ,  Shin-Kun KIM

IPC: B05C1/02

CPC classification number: B05C1/027 ,  H01L21/6715 ,  H01L21/6838 ,  H01L33/0079 ,  H01L33/50 ,  H01L2933/0041

Abstract: Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.

Abstract translation: 制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。 该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。