公开(公告)号：US10566502B2

公开(公告)日：2020-02-18

申请号：US15171087

申请日：2016-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Si Han Kim ,  Wan Tae Lim ,  Eun Joo Shin

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/58 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/06 ,  H01L33/22

Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.