公开(公告)号：US10566502B2

公开(公告)日：2020-02-18

申请号：US15171087

申请日：2016-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Si Han Kim ,  Wan Tae Lim ,  Eun Joo Shin

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/58 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/06 ,  H01L33/22

Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

公开(公告)号：US10217914B2

公开(公告)日：2019-02-26

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Wan Tae Lim ,  Yong Il Kim ,  Hye Seok Noh ,  Eun Joo Shin ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L29/49 ,  H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21Y103/10 ,  F21Y115/10 ,  F21S8/02 ,  F21V23/00 ,  F21K9/275 ,  F21K9/237

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.