公开(公告)号：US09099541B2

公开(公告)日：2015-08-04

申请号：US14170062

申请日：2014-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hwang Kim ,  Sunpil Youn ,  Sangwon Kim ,  Kwang-chul Choi ,  Tae Hong Min

IPC: H01L21/768 ,  H01L23/31 ,  H01L23/36 ,  H01L23/48 ,  H01L21/56 ,  H01L23/498

CPC classification number: H01L21/76898 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49816 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.

Abstract translation: 半导体器件包括具有第一侧和第二侧的基板，使得第一和第二面彼此面对，贯穿基板的通孔塞，绝缘膜衬垫和防污染膜。 绝缘膜衬垫位于通孔插塞和衬底之间，并且绝缘膜衬套相对于第二侧具有凹陷表面。 防污染膜覆盖第二面，防污染膜位于凹陷表面上，并且在通孔插塞和基底之间。

公开(公告)号：US20140312505A1

公开(公告)日：2014-10-23

申请号：US14319688

申请日：2014-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： SeYoung Jeong ,  Sunpil Youn ,  Hogeon Song

IPC: H01L23/48 ,  H01L27/108

CPC classification number: H01L23/481 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/108 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/12708 ,  H01L2924/00

Abstract: A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein a number of the second connection structures is less than a number of the first connection structures.

Abstract translation: 半导体器件包括第一半导体芯片，设置在第一半导体芯片的第一侧上的第一连接结构，设置在第一半导体芯片的第二侧上的第二半导体芯片，以及设置在第一和第二半导体芯片之间的第二连接结构 半导体芯片，其中多个第二连接结构小于第一连接结构的数量。