SEMICONDUCTOR PACKAGE
    1.
    发明申请

    公开(公告)号:US20220320053A1

    公开(公告)日:2022-10-06

    申请号:US17457660

    申请日:2021-12-05

    Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip disposed on the first redistribution substrate, a first mold layer that covers the first semiconductor chip and the first redistribution substrate, a second redistribution substrate disposed on the first mold layer, a second semiconductor chip disposed on the second redistribution substrate, where the second semiconductor chip includes a second-chip first conductive bump that does not overlap the first semiconductor chip, a first sidewall that overlaps the first semiconductor chip, and a second sidewall that does not overlap the first semiconductor chip, wherein the first sidewall and the second sidewall are opposite to each other, and a first mold via that penetrates the first mold layer connects the second-chip first conductive bump to the first redistribution substrate, and overlaps the second-chip first conductive bump.

    SEMICONDUCTOR PACKAGE
    2.
    发明公开

    公开(公告)号:US20240355796A1

    公开(公告)日:2024-10-24

    申请号:US18761580

    申请日:2024-07-02

    Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip disposed on the first redistribution substrate, a first mold layer that covers the first semiconductor chip and the first redistribution substrate, a second redistribution substrate disposed on the first mold layer, a second semiconductor chip disposed on the second redistribution substrate, where the second semiconductor chip includes a second-chip first conductive bump that does not overlap the first semiconductor chip, a first sidewall that overlaps the first semiconductor chip, and a second sidewall that does not overlap the first semiconductor chip, wherein the first sidewall and the second sidewall are opposite to each other, and a first mold via that penetrates the first mold layer connects the second-chip first conductive bump to the first redistribution substrate, and overlaps the second-chip first conductive bump.

    SEMICONDUCTOR PACKAGE
    3.
    发明申请

    公开(公告)号:US20250006714A1

    公开(公告)日:2025-01-02

    申请号:US18762255

    申请日:2024-07-02

    Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip disposed on the first redistribution substrate, a first mold layer that covers the first semiconductor chip and the first redistribution substrate, a second redistribution substrate disposed on the first mold layer, a second semiconductor chip disposed on the second redistribution substrate, where the second semiconductor chip includes a second-chip first conductive bump that does not overlap the first semiconductor chip, a first sidewall that overlaps the first semiconductor chip, and a second sidewall that does not overlap the first semiconductor chip, wherein the first sidewall and the second sidewall are opposite to each other, and a first mold via that penetrates the first mold layer connects the second-chip first conductive bump to the first redistribution substrate, and overlaps the second-chip first conductive bump.

    SEMICONDUCTOR PACKAGE
    4.
    发明申请

    公开(公告)号:US20220139879A1

    公开(公告)日:2022-05-05

    申请号:US17325907

    申请日:2021-05-20

    Abstract: Disclosed is a semiconductor package comprising a substrate, a chip stack including semiconductor chips stacked in an ascending stepwise shape on the substrate, first power/ground wires through which the substrate is connected to a lowermost semiconductor chip of the chip stack and neighboring semiconductor chips of the chip stack are connected to each other, and a second power/ground wire that extends from a first semiconductor chip and is connected to the substrate. The first semiconductor chip is one semiconductor chip other than the lowermost semiconductor chip and an uppermost semiconductor chip of the chip stack. The chip stack includes a first stack and a second stack on the first stack. The second stack constitutes a channel separate from that of the first stack.

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