公开(公告)号：US20200098763A1

公开(公告)日：2020-03-26

申请号：US16411613

申请日：2019-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN WOO BAE ,  Su Young SHIN ,  Young Ho KOH ,  Bo Un YOON ,  II Young YOON ,  Yang Hee LEE ,  Hee Sook CHEON

IPC: H01L27/108 ,  H01L21/033 ,  H01L21/311 ,  H01L21/321 ,  H01L49/02 ,  H01L21/3213 ,  H01L21/285

Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

公开(公告)号：US20180362806A1

公开(公告)日：2018-12-20

申请号：US15822117

申请日：2017-11-25

Applicant: Samsung Electronics Co., Ltd. ,  K.C.TECH CO., LTD

Inventor： Seung Ho PARK ,  Chang Gil Kwon ,  Sung Pyo LEE ,  Jun Ha HWANG ,  Sang Kyun KIM ,  Hye Sung PARK ,  Su Young SHIN ,  Woo In LEE ,  Yang Hee LEE ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/3105

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.