公开(公告)号：US20230253535A1

公开(公告)日：2023-08-10

申请号：US17979463

申请日：2022-11-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungwook LEE ,  Sumin HWANGBO ,  Sanghyun KIM ,  Yujung KIM ,  Jungwook LEE ,  Minwook CHOI

IPC分类号： H01L33/50 ,  H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L27/15

CPC分类号： H01L33/505 ,  H01L27/156 ,  H01L33/10 ,  H01L33/62 ,  H01L33/382

摘要： Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure..