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公开(公告)号：US20210362644A1
公开(公告)日：2021-11-25
申请号：US17177913
申请日：2021-02-17
发明人： Yongmin KWON , Geunwoo KO , Jaeyoon KIM , Jungwook LEE , Jonghyun LEE
IPC分类号： B60Q1/14
摘要： A light-emitting device includes a plurality of first light-emitting regions contiguously arranged in a first direction. Each of the first light-emitting regions includes at least one light-emitting cell. A plurality of second light-emitting regions are contiguously arranged in the first direction. Each of the second light-emitting regions includes at least one light-emitting cell. The plurality of second light-emitting regions are adjacent to the plurality of first light-emitting regions in a second direction that intersects the first direction. A first driver controller controls emission of the plurality of first light-emitting regions. Each of the first light-emitting regions has a greater dimension than each of the second light-emitting regions in the second direction. The first driver controller simultaneously turns on or off an entirety of each of the first light-emitting regions.
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2.发明公开公开(公告)号：US20230253535A1
公开(公告)日：2023-08-10
申请号：US17979463
申请日：2022-11-02
发明人： Sungwook LEE , Sumin HWANGBO , Sanghyun KIM , Yujung KIM , Jungwook LEE , Minwook CHOI
CPC分类号： H01L33/505 , H01L27/156 , H01L33/10 , H01L33/62 , H01L33/382
摘要： Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure..
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公开(公告)号：US20210366982A1
公开(公告)日：2021-11-25
申请号：US17181213
申请日：2021-02-22
发明人： Sangbum LEE , Inho KIM , Geunwoo KO , Yongmin KWON , Juhyun KIM , Jungwook LEE
摘要： A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.
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