公开(公告)号：US12040402B2

公开(公告)日：2024-07-16

申请号：US17690178

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang Xu ,  Nam Kyu Cho ,  Seok Hoon Kim ,  Yong Seung Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Sang Gil Lee ,  Si Hyung Lee

IPC: H01L29/76 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L29/94

CPC classification number: H01L29/7851 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/41791

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

公开(公告)号：US20230145260A1

公开(公告)日：2023-05-11

申请号：US17831513

申请日：2022-06-03

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Yang Xu ,  Nam Kyu Cho ,  Seok Hoon Kim ,  Yong Seung Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Sang Gil Lee ,  Si Hyung Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L29/0649 ,  H01L29/41791

Abstract: A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.