专利检索 ap:("SANDISK TECHNOLOGIES LLC") AND inv:"Ananth Kaushik" 第 1 页

1.

发明授权
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling 有权

公开(公告)号：US12106790B2

公开(公告)日：2024-10-01

申请号：US17656306

申请日：2022-03-24

申请人： SANDISK TECHNOLOGIES LLC

发明人： Alan Kalitsov , Derek Stewart , Ananth Kaushik , Gerardo Bertero

IPC分类号： G11C11/16 , G01R33/09 , H01F10/32 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85

CPC分类号： G11C11/161 , G01R33/093 , G11C11/1673 , G11C11/1675 , H01F10/3286 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85

摘要： A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.