公开(公告)号：US20170365613A1

公开(公告)日：2017-12-21

申请号：US15279959

申请日：2016-09-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Marika GUNJI-YONEOKA ,  Atsushi SUYAMA ,  Jayavel PACHAMUTHU ,  Tsuyoshi HADA ,  Daewung KANG ,  Murshed CHOWDHURY ,  James KAI ,  Hiro KINOSHITA ,  Tomoyuki OBU ,  Luckshitha Suriyasena LIYANAGE

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a semiconductor substrate. Memory openings are formed through the alternating stack. An optional silicon-containing epitaxial pedestal and a memory film are formed in each memory opening. After forming an opening through a bottom portion of the memory film within each memory opening, a germanium-containing semiconductor layer and a dielectric layer is formed in each memory opening. Employing the memory film and the dielectric layer as a crucible, a liquid phase epitaxy anneal is performed to convert the germanium-containing semiconductor layer into a germanium-containing epitaxial channel layer. A dielectric core and a drain region can be formed over the dielectric layer. The germanium-containing epitaxial channel layer is single crystalline, and can provide a higher charge carrier mobility than a polysilicon channel.