公开(公告)号：US20220359690A1

公开(公告)日：2022-11-10

申请号：US17316015

申请日：2021-05-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dai IWATA ,  Hiroshi NAKATSUJI ,  Hiroyuki OGAWA ,  Eiichi FUJIKURA

IPC: H01L29/423 ,  H01L29/66 ,  H01L27/07 ,  H01L21/8238 ,  H01L29/40

Abstract: A field effect transistor includes a gate dielectric and a gate electrode overlying an active region and contacting a sidewall of a trench isolation structure. The transistor may be a fringeless transistor in which the gate electrode does not overlie a portion of the trench isolation region. A planar dielectric spacer plate and a conductive gate cap structure may overlie the gate electrode. The conductive gate cap structure may have a z-shaped vertical cross-sectional profile to contact the gate electrode and to provide a segment overlying the planar dielectric spacer plate. Alternatively or additionally, a conductive gate connection structure may be provided to provide electrical connection between two electrodes of adjacent field effect transistors.