公开(公告)号：US10777570B2

公开(公告)日：2020-09-15

申请号：US15990037

申请日：2018-05-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tadashi Nakamura ,  Jin Liu ,  Kazuya Tokunaga ,  Marika Gunji-Yoneoka ,  Matthias Baenninger ,  Hiroyuki Kinoshita ,  Murshed Chowdhury ,  Jiyin Xu

IPC: H01L27/11582 ,  H01L29/06 ,  H01L29/10 ,  H01L23/528 ,  H01L29/423 ,  H01L21/311 ,  H01L21/764 ,  H01L23/29 ,  H01L23/31 ,  H01L49/02

Abstract: An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.

公开(公告)号：US20180277567A1

公开(公告)日：2018-09-27

申请号：US15990037

申请日：2018-05-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tadashi Nakamura ,  Jin Liu ,  Kazuya Tokunaga ,  Marika Gunji-Yoneoka ,  Matthias Baenninger ,  Hiroyuki Kinoshita ,  Murshed Chowdhury ,  Jiyin Xu

IPC: H01L27/11582 ,  H01L49/02 ,  H01L23/31 ,  H01L23/29 ,  H01L21/764 ,  H01L29/423 ,  H01L23/528 ,  H01L29/10 ,  H01L29/06 ,  H01L21/311

CPC classification number: H01L27/11582 ,  H01L21/31111 ,  H01L21/764 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/528 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/42372

Abstract: An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.

公开(公告)号：US09991280B2

公开(公告)日：2018-06-05

申请号：US15434544

申请日：2017-02-16

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tadashi Nakamura ,  Jin Liu ,  Kazuya Tokunaga ,  Marika Gunji-Yoneoka ,  Matthias Baenninger ,  Hiroyuki Kinoshita ,  Murshed Chowdhury ,  Jiyin Xu ,  Dai Iwata ,  Hiroyuki Ogawa ,  Kazutaka Yoshizawa ,  Yasuaki Yonemochi

IPC: H01L27/115 ,  H01L27/11582 ,  H01L29/06 ,  H01L29/10 ,  H01L23/528 ,  H01L29/423 ,  H01L21/311 ,  H01L21/764 ,  H01L23/29 ,  H01L23/31 ,  H01L49/02

CPC classification number: H01L27/11582 ,  H01L21/31111 ,  H01L21/764 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/528 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/42372

Abstract: An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.