公开(公告)号：US20240063062A1

公开(公告)日：2024-02-22

申请号：US17821273

申请日：2022-08-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kouta ONOGI ,  Kazutaka YOSHIZAWA ,  Hokuto KODATE ,  Mitsuhiro TOGO ,  Takahito FUJITA

IPC: H01L21/8234 ,  H01L21/28 ,  H01L21/285 ,  H01L21/265 ,  H01L21/266 ,  H01L21/768 ,  H01L29/49 ,  H01L29/45 ,  H01L23/535 ,  H01L27/088

CPC classification number: H01L21/823475 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823443 ,  H01L29/4933 ,  H01L29/45 ,  H01L23/535 ,  H01L27/088

Abstract: A transistor includes a first active region and a second active region separated by a semiconductor channel, a gate stack structure including a gate dielectric and a gate electrode overlying the semiconductor channel, a gate contact via structure overlying and electrically connected to the gate electrode and having a top surface located in a first horizontal plane, a first active-region contact via structure overlying and electrically connected to the first active region, and having a top surface located within a second horizontal plane that underlies the first horizontal plane, a first connection line structure contacting a top surface of the first active-region contact via structure, and a first connection via structure contacting a top surface of the first connection line structure and having a top surface within the first horizontal plane.