公开(公告)号：US09673304B1

公开(公告)日：2017-06-06

申请号：US15210915

申请日：2016-07-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Michiaki Sano ,  Akira Nakada ,  Tetsuya Yamada ,  Manabu Hayashi ,  Takashi Matsubara ,  Sung Tae Lee ,  Akio Nishida

IPC: H01L29/66 ,  H01L27/115 ,  H01L29/792 ,  H01L29/788 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2454 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

Abstract: A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material on a sidewall of the hole, forming a local bit line in the hole, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line layer.