公开(公告)号：US20220130852A1

公开(公告)日：2022-04-28

申请号：US17081458

申请日：2020-10-27

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuji TOTOKI ,  Fumitaka AMANO

IPC: H01L27/11582 ,  H01L23/522

Abstract: A semiconductor structure includes a first alternating stack of first insulating layers and first electrically conductive layers having first stepped surfaces and located over a substrate, a second alternating stack of second insulating layers and second electrically conductive layers having second stepped surfaces, and memory opening fill structures extending through the alternating stacks. A contact via assembly is provided, which includes a first conductive via structure vertically extending from a top surface of one of the first electrically conductive layers through a subset of layers within the second alternating stack and through the second retro-stepped dielectric material portion, an insulating spacer located within an opening through the subset of layers, and a second conductive via structure laterally surrounding the insulating spacer and contacting a second electrically conductive layer.

公开(公告)号：US20240099014A1

公开(公告)日：2024-03-21

申请号：US18524552

申请日：2023-11-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shunsuke TAKUMA ,  Yuji TOTOKI ,  Seiji SHIMABUKURO ,  Tatsuya HINOUE ,  Kengo KAJIWARA ,  Akihiro TOBIOKA

IPC: H10B43/50 ,  H01L23/00 ,  H01L23/522 ,  H10B41/27 ,  H10B41/50 ,  H10B43/27

CPC classification number: H10B43/50 ,  H01L23/5226 ,  H01L23/562 ,  H10B41/27 ,  H10B41/50 ,  H10B43/27

Abstract: At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.

公开(公告)号：US20220230917A1

公开(公告)日：2022-07-21

申请号：US17153972

申请日：2021-01-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitaka AMANO ,  Yuji TOTOKI ,  Shunsuke TAKUMA

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers having stepped surfaces, memory stack structures extending through the alternating stack, a retro-stepped dielectric material portion overlying the stepped surfaces, and pillar-shaped contact-opening assemblies located within a respective pillar-shaped volume vertically extending through the retro-stepped dielectric material portion and a region of the alternating stack that underlies the retro-stepped dielectric material portion. Some of the pillar-shaped contact-opening assemblies can include a first conductive plug that laterally contacts a cylindrical sidewall of a respective one of the electrically conductive layers and a conductive via structure that contacts a top surface of the first conductive plug.

公开(公告)号：US20220223614A1

公开(公告)日：2022-07-14

申请号：US17146866

申请日：2021-01-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shunsuke TAKUMA ,  Yuji TOTOKI ,  Seiji SHIMABUKURO ,  Tatsuya HINOUE ,  Kengo KAJIWARA ,  Akihiro TOBIOKA

IPC: H01L27/11575 ,  H01L23/522 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/11582

Abstract: At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.