公开(公告)号：US20200081347A1

公开(公告)日：2020-03-12

申请号：US16565661

申请日：2019-09-10

Applicant: SEMES CO., LTD.

Inventor： KIHOON CHOI ,  CHAN YOUNG HEO ,  DO HEON KIM ,  HAE-WON CHOI ,  JAESEONG LEE ,  ANTON KORIAKIN ,  JI SOO JEONG

IPC: G03F7/16 ,  B08B3/04 ,  G03F7/32 ,  G03F7/30

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

公开(公告)号：US20240093940A1

公开(公告)日：2024-03-21

申请号：US18120981

申请日：2023-03-13

Applicant: SEMES CO., LTD.

Inventor： HAE-WON CHOI ,  JAE SEONG LEE ,  HONG CHAN CHO

IPC: F26B25/06 ,  F26B5/00

CPC classification number: F26B25/066 ,  F26B5/005

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first chamber having a supply port for supplying a treating fluid; a second chamber in combination with the first chamber defining a treating space; a support member configured to support a substrate in the treating space; and a baffle unit installed in the first chamber to face the support port, and wherein the baffle unit includes: a first baffle assembly including a first baffle having first holes through which the treating fluid flow; and a second baffle assembly installed at a position farther from the support port than the first baffle assembly, and including a second baffle having second holes through which the treating fluid flow.

公开(公告)号：US20200026194A1

公开(公告)日：2020-01-23

申请号：US16510641

申请日：2019-07-12

Applicant: SEMES CO., LTD.

Inventor： HAE-WON CHOI ,  ANTON KORIAKIN ,  JI SOO JEONG ,  KIHOON CHOI ,  JAESEONG LEE ,  CHAN YOUNG HEO ,  DO HEON KIM

IPC: G03F7/40 ,  G03F7/16 ,  G03F7/32 ,  G03F7/42

Abstract: A substrate treating method includes performing a developing process on a substrate subjected to an exposing process and a post-bake process by applying a developing fluid to the substrate, applying a rinsing fluid to the substrate subjected to the developing process, and moving, to a high-pressure chamber, the substrate having the rinsing fluid applied thereto and treating the substrate by using a supercritical fluid.

公开(公告)号：US20190333788A1

公开(公告)日：2019-10-31

申请号：US16396736

申请日：2019-04-28

Applicant: SEMES CO., LTD.

Inventor： JAESEONG LEE ,  KIHOON CHOI ,  HAE-WON CHOI ,  ANTON KORIAKIN ,  CHAN YOUNG HEO ,  DO HEON KIM ,  JI SOO JEONG

IPC: H01L21/67 ,  H01L21/02

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.