公开(公告)号：US20230317419A1

公开(公告)日：2023-10-05

申请号：US17712044

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Joun Taek KOO ,  Dong Hun KIM ,  Seong Gil LEE ,  Ji Hwan LEE ,  Dong Sub OH ,  Myeong Sub NOH ,  Du Ri KIM

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J2237/3344

Abstract: Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.