公开(公告)号：US20240290587A1

公开(公告)日：2024-08-29

申请号：US18394198

申请日：2023-12-22

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Hyun Min LIM ,  Hwa Il YUN

IPC: H01J37/32

CPC classification number: H01J37/3288 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32577 ,  H01J2237/3341

Abstract: A substrate treatment apparatus includes a processing chamber including an upper chamber and a lower chamber having a treatment space for treating a substrate, a substrate support unit provided in the treatment space, the substrate support unit fixing the substrate, a gas supply unit supplying a process gas to the inside of the upper chamber and the treatment space, a plasma generation unit including an upper electrode provided in the upper chamber and a high-frequency power source connected to the upper electrode, the high-frequency power source supplying high-frequency power through an impedance matcher, and a filter unit connected to the upper electrode, the filter unit removing charges accumulated on one surface of the upper electrode.

公开(公告)号：US20230197412A1

公开(公告)日：2023-06-22

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO, LTD.

Inventor： Seong Gil LEE ,  Young Je UM ,  Myoung Sub NOH ,  Dong Sub OH ,  Min Sung HAN ,  Dong Hun KIM ,  Wan Jae PARK

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32422 ,  H01J37/32449 ,  B08B7/0035 ,  H01J2237/3346 ,  H01J2237/335 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US20230317419A1

公开(公告)日：2023-10-05

申请号：US17712044

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Joun Taek KOO ,  Dong Hun KIM ,  Seong Gil LEE ,  Ji Hwan LEE ,  Dong Sub OH ,  Myeong Sub NOH ,  Du Ri KIM

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J2237/3344

Abstract: Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.

公开(公告)号：US20230317415A1

公开(公告)日：2023-10-05

申请号：US17712035

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Da Som BAE ,  Wan Jae PARK ,  Seong Gil LEE ,  Young Je UM ,  Ji Hwan LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Joun Taek KOO ,  Du Ri KIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065 ,  H01J37/32568

Abstract: A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the firs direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

公开(公告)号：US20230144896A1

公开(公告)日：2023-05-11

申请号：US17879780

申请日：2022-08-03

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Dong Hun KIM ,  Seong Gil LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Min Sung HAN ,  Jae Hoo LEE

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

CPC classification number: H01L21/67766 ,  H01L21/67103 ,  C23C16/4408 ,  H01L21/67034

Abstract: A substrate treating apparatus configuring an individual LL for each PM and a semiconductor manufacturing facility including the same are provided. The semiconductor manufacturing facility comprises an index module including a first transfer robot and for carrying out and transferring a substrate mounted on a container using the first transfer robot, a transfer module including a second transfer robot and for relaying the substrate transferred by the index module using the second transfer robot, a buffer chamber for heating the substrate relayed by the transfer module, and a process chamber for treating the substrate heated by the buffer chamber, wherein the buffer chamber heats the substrate while the substrate waits before being loaded into the process chamber.