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    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING PLASMA
    1.
    发明公开
    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING PLASMA 审中-公开

    公开(公告)号：US20230317417A1

    公开(公告)日：2023-10-05

    申请号：US17712055

    申请日：2022-04-01

    Applicant: SEMES CO., LTD.

    Inventor： Min Sung HAN ,  Jae Hoo LEE ,  Yoon Jong JU ,  Wan Jae PARK

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/31116

    Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.

    SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS
    2.
    发明公开
    SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS 审中-公开

    公开(公告)号：US20230307266A1

    公开(公告)日：2023-09-28

    申请号：US17704218

    申请日：2022-03-25

    Applicant: SEMES CO., LTD.

    Inventor： Kyung Man KIM ,  Jeong Woo HAN ,  Ji-hwan LEE ,  Wan Jae PARK ,  Yoon Jong JU ,  Seong Hak BAE

    IPC: H01L21/67 ,  H01L21/683

    CPC classification number: H01L21/67103 ,  H01L21/67248 ,  H01L21/6833

    Abstract: The present invention provides a support unit, including: a support plate on which a substrate is placed, and which includes an electrostatic electrode providing electrostatic force to the substrate; a heater provided inside the support plate and configured to heat the substrate; an insulating plate provided under the support plate as an insulating substance; and a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat, in which the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate; a first member configured to support the pin; and a second member provided to surround the first member, and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member.

    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE
    6.
    发明申请
    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE 有权

    公开(公告)号：US20220384153A1

    公开(公告)日：2022-12-01

    申请号：US17752079

    申请日：2022-05-24

    Applicant: SEMES CO., LTD.

    Inventor： Dong-Hun KIM ,  Wan Jae PARK ,  Ji Hoon PARK ,  Du Ri KIM

    IPC: H01J37/32 ,  H01J65/04 ,  H01J61/30

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a plasma source configured to apply an electric field; a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere; a support unit disposed in the inner space and configured to support a substrate to be treated; and an electrodeless lamp disposed above the substrate in the inner space, and wherein the electrodeless lamp includes an electric field transmissive housing having a discharging space therein; and a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.

    APPARATUS FOR TREATING SUBSTRATE
    7.
    发明公开
    APPARATUS FOR TREATING SUBSTRATE 审中-公开

    公开(公告)号：US20240096603A1

    公开(公告)日：2024-03-21

    申请号：US18469755

    申请日：2023-09-19

    Applicant: SEMES CO., LTD.

    Inventor： Dong-Hun KIM ,  Wan Jae PARK ,  Dong Sub OH ,  Myoung Sub NOH ,  Ji Hoon PARK

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/67069

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an electrode plate applied with a power; an ion blocker positioned at a bottom side of the electrode plate, which has a plurality of top holes formed thereon, and which is grounded; a shower head positioned at a bottom side of the ion blocker and which has a plurality of bottom holes formed thereon; and a turbulence generating unit configured to have a turbulence space therein, and which is positioned at a space between the ion blocker and the shower head, and wherein the top hole is positioned to overlap the turbulence space when seen from above, and the bottom hole is positioned at an outer side of the turbulence space, and which faces at least one of a bottom surface of the ion blocker and an outer wall of the turbulence generating unit when seen from below.

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